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BLF888BS - UHF power LDMOS transistor

Download the BLF888BS datasheet PDF. This datasheet also covers the BLF888B variant, as both devices belong to the same uhf power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (BLF888B-NXPSemiconductors.pdf) that lists specifications for multiple related part numbers.

General Description

A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

Table 1.

Overview

BLF888B; BLF888BS UHF power LDMOS transistor Rev.

2 — 12 July 2013 Product data sheet 1.

Product profile 1.

Key Features

  • Excellent ruggedness.
  • Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W.
  • High power gain.
  • High efficiency.
  • Designed for broadband operation (470 MHz to 860 MHz).
  • Internal input matching for high gain and optimum broadband operation.
  • Excellent reliability.
  • Easy power control.
  • Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC 1.3.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Ampleon Logo BLF888BS Power LDMOS transistor Ampleon
Ampleon Logo BLF888B Power LDMOS transistor Ampleon
NXP Logo BLF888 UHF Power LDMOS Transistor NXP
Ampleon Logo BLF888A Power LDMOS transistor Ampleon
NXP Logo BLF888A UHF Power LDMOS Transistor NXP

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