BLF888BS Datasheet - NXP Semiconductors

UHF power LDMOS transistor

BLF888BS Features

* Excellent ruggedness

* Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W

* High power gain

* High efficiency

* Designed for broadband operation (470 MHz to 860 MHz)

* Internal input matching for high gain and optimum broadband operation

* Excellent reliabili

BLF888BS General Description

A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 50 V unless otherwise specified. Mo.

BLF888BS Datasheet (319.32 KB)

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Datasheet Details

Part number:

BLF888BS

Manufacturer:

NXP ↗ Semiconductors

File Size:

319.32 KB

Description:

Uhf power ldmos transistor.

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BLF888BS UHF power LDMOS transistor NXP Semiconductors

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BLF888BS Features

BLF888BS General Description

Datasheet Details

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