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BLL6H0514LS-130 Datasheet - NXP Semiconductors

LDMOS driver transistor

BLL6H0514LS-130 Features

* Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (0.5 GHz to 1.4 GHz) Compliant

BLL6H0514LS-130 General Description

130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit. Mode of operation pulsed RF f (MHz) 960 to 1215 1200 to 1400 tp (μs) 128 300 δ (%) 10 10 .

BLL6H0514LS-130 Datasheet (319.76 KB)

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Datasheet Details

Part number:

BLL6H0514LS-130

Manufacturer:

NXP ↗ Semiconductors

File Size:

319.76 KB

Description:

Ldmos driver transistor.
DataSheet.in BLL6H0514L-130; BLL6H0514LS-130 LDMOS driver transistor Rev. 1 9 August 2010 Preliminary data sheet 1. Product profile 1.1 Ge.

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BLL6H0514LS-130 LDMOS driver transistor NXP Semiconductors

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