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BLS6G3135S-120, BLS6G3135-120 Datasheet - NXP Semiconductors

BLS6G3135S-120 LDMOS S-Band radar power transistor

120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 3.1 to 3.5 VDS (V) 32 PL.

BLS6G3135S-120 Features

* I Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of up to 300 µs with δ of 10 %: N Output power = 120 W N Gain = 11 dB N Efficiency = 43 % I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I E

BLS6G3135-120_NXPSemiconductors.pdf

This datasheet PDF includes multiple part numbers: BLS6G3135S-120, BLS6G3135-120. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

BLS6G3135S-120, BLS6G3135-120

Manufacturer:

NXP ↗ Semiconductors

File Size:

106.19 KB

Description:

Ldmos s-band radar power transistor.

Note:

This datasheet PDF includes multiple part numbers: BLS6G3135S-120, BLS6G3135-120.
Please refer to the document for exact specifications by model.

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BLS6G3135S-120 BLS6G3135-120 LDMOS S-Band radar power transistor NXP Semiconductors

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