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BUK653R3-30C - N-Channel MOSFET

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General Description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.

1.2

Overview

TO-220AB BUK653R3-30C N-channel TrenchMOS intermediate level FET Rev.

1 — 13 July 2011 Product data sheet 1.

Product profile 1.

Key Features

  • AEC Q101 compliant.
  • Suitable for standard and logic level gate drive sources.
  • Suitable for thermally demanding environments due to 175 °C rating 1.3.

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