* AEC Q101 compliant
* Suitable for intermediate level gate drive sources
* Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications
* 12 V and 24 V Automotive systems
* Electric and electro-hydraulic power steering
* Motors, lamps and solenoid con
BUK6E3R2-55C Datasheet (181.84 KB)
BUK6E3R2-55C
NXP ↗ Semiconductors
181.84 KB
N-channel mosfet.
BUK6E3R2-55C N-channel TrenchMOS intermediate level FET Rev. 01 6 September 2010 Product data sheet 1. Product profile 1.1 General descript.
📁 Related Datasheet
BUK6E3R4-40C N-channel TrenchMOS intermediate level FET (NXP)
BUK6E2R0-30C N-Channel MOSFET (NXP Semiconductors)
BUK6E2R3-40C N-channel TrenchMOS intermediate level FET (NXP Semiconductors)
BUK6E4R0-75C N-channel TrenchMOS FET (NXP)
BUK6207-30C N-channel TrenchMOS intermediate level FET (NXP Semiconductors)
BUK6207-55C N-Channel MOSFET (NXP Semiconductors)
BUK6208-40C N-channel TrenchMOS intermediate level FET (NXP)
BUK6209-30C N-channel TrenchMOS intermediate level FET (NXP)
BUK6210-55C N-Channel MOSFET (NXP Semiconductors)
BUK6211-75C N-channel TrenchMOS FET (NXP Semiconductors)
