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BUK7Y13-40B - N-Channel MOSFET

General Description

N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.

Key Features

  • I Very low on-state resistance I 175 °C rated I Q101 compliant I Standard level compatible 1.3.

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BUK7Y13-40B N-channel TrenchMOS standard level FET Rev. 02 — 2 October 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features I Very low on-state resistance I 175 °C rated I Q101 compliant I Standard level compatible 1.3 Applications I Automotive ABS systems I Motors, lamps and solenoids I Diesel injection systems I Automotive transmission control I Fuel pump and injection I Airbag 1.4 Quick reference data I EDS(AL)S ≤ 91 mJ I ID ≤ 55 A I RDSon = 11 mΩ (typ) I Ptot ≤ 75 W 2. Pinning information Table 1.