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BUK7Y18-55B Datasheet, NXP Semiconductors

BUK7Y18-55B fet equivalent, n-channel trenchmos standard level fet.

BUK7Y18-55B Avg. rating / M : 1.0 rating-16

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BUK7Y18-55B Datasheet

Features and benefits


* Q101 compliant
* Suitable for standard level gate drive sources
* Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications
*.

Application

1.2 Features and benefits
* Q101 compliant
* Suitable for standard level gate drive sources
* Suitable for.

Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in aut.

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