BUK9006-55A Description
N-channel enhancement mode field-effect power transistor available as a bare die using Philips General Purpose Automotive (GPA) TrenchMOS™ technology. BUK9006-55A distributed as individual die on reel.
BUK9006-55A is N-channel Enhancement mode field-effect power Transistor manufactured by NXP Semiconductors .
N-channel enhancement mode field-effect power transistor available as a bare die using Philips General Purpose Automotive (GPA) TrenchMOS™ technology. BUK9006-55A distributed as individual die on reel.