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BUK956R1-100E

The BUK956R1-100E is N-channel TrenchMOS logic level FET designed by NXP Semiconductors.

Product Overview

NXP Semiconductors

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BUK956R1-100E N-channel TrenchMOS logic level FET by NXP Semiconductors - Datasheet Preview — Datasheet preview – BUK956R1-100E

Datasheet Details

Part number	BUK956R1-100E
Manufacturer	NXP Semiconductors
File Size	213.91 KB
Description	N-channel TrenchMOS logic level FET
Datasheet	BUK956R1-100E-NXPSemiconductors.pdf
Additional preview pages of the BUK956R1-100E datasheet.

Product details

Description

Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.

Features

AEC Q101 compliant.
Repetitive avalanche rated.
Suitable for thermally demanding environments due to 175 °C rating.
True logic level gate with Vgst(th) rating of greater than 0.5V at 175 °C 1.3.

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Published: Aug 23, 2014 |