Datasheet4U Logo Datasheet4U.com

BUK959E3R2-40B - TrenchMOS logic level FET

General Description

N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.

Key Features

  • s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUK9504-40A (BUK9x04-40A) TrenchMOS logic level FET NXP
BUK9505-30A TrenchMOS transistor Logic level FET NXP
BUK9506-30 TrenchMOS transistor Logic level FET NXP
BUK9506-55A TrenchMOS transistor Logic level FET NXP
BUK9506-55B (BUK9x06-55B) N-channel TrenchMOSTM logic level FET NXP

Other Datasheets by NXP Semiconductors

Part Number Description
BUK9506-40B N-Channel MOSFET
BUK9506-55A TrenchMOS logic level FET
BUK9506-75B N-channel TrenchMOS logic level FET
BUK9511-55A N-Channel MOSFET
BUK9514-55A N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BUK95/96/9E3R2-40B TrenchMOS™ logic level FET Rev. 04 — 14 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology. 1.2 Features s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 1.2 J s ID ≤ 100 A s RDSon = 2.7 mΩ (typ) s Ptot ≤ 300 W. 2.