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BUK95E3R2-40B - N-Channel MOSFET

General Description

N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.

Key Features

  • s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BUK95/96/9E3R2-40B TrenchMOS™ logic level FET Rev. 04 — 14 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology. 1.2 Features s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 1.2 J s ID ≤ 100 A s RDSon = 2.7 mΩ (typ) s Ptot ≤ 300 W. 2.