Datasheet4U Logo Datasheet4U.com

BUK9Y19-100E - MOSFET

General Description

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology.

This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

2.

12 V, 24 V and 48 V Automotive sy

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUK9Y19-100E N-channel MOSFET nexperia
BUK9Y19-55B N-channel MOSFET nexperia
BUK9Y19-75B N-channel MOSFET nexperia
BUK9Y104-100B N-channel MOSFET nexperia
BUK9Y107-80E N-channel MOSFET nexperia

Other Datasheets by NXP Semiconductors

Part Number Description
BUK9Y19-55B N-channel TrenchMOS logic level FET
BUK9Y19-75B N-channel TrenchMOS logic level FET
BUK9Y104-100B N-channel TrenchMOS logic level FET
BUK9Y107-80E MOSFET
BUK9Y11-30B N-channel TrenchMOS logic level FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
LF BUK9Y19-100E 6 November 2013 PA K 56 N-channel 100 V, 19 mΩ logic level MOSFET in LFPAK56 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Applications • • • • 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 3. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 5 V; ID = 15 A; Tj = 25 °C; Fig.