CGD1040HI - 1 GHz 20 dB gain GaAs high output power doubler

NXP Semiconductors

The CGD1040HI by NXP Semiconductors is a 1 GHz 20 dB gain GaAs high output power doubler. Below is the official datasheet preview.

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CGD1040HI 1 GHz 20 dB gain GaAs high output power doubler by NXP Semiconductors - Datasheet Preview — Official preview page of the **CGD1040HI** 1 GHz 20 dB gain GaAs high output power doubler datasheet (NXP Semiconductors).

Datasheet Details

Part number	CGD1040HI
Manufacturer	NXP Semiconductors
File Size	76.30 KB
Description	1 GHz 20 dB gain GaAs high output power doubler
Datasheet	CGD1040HI_NXPSemiconductors.pdf
Additional preview pages of the CGD1040HI datasheet.

CGD1040HI Product details

Description

Hybrid ampliﬁer module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.

Features

I I I I I I I I I Excellent linearity Superior levels of ESD protection Extremely low noise Excellent return loss properties Gain compensation over temperature Rugged construction Unconditionally stable Thermally optimized design Compliant to Directive 2002/95/EC, regarding Restriction of the use of certain Hazardous Substances (RoHS) I Integrated ring wave surge protection 1.3.

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Published: Mar 18, 2010 |