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CGD1042H Datasheet 23 dB gain high output power doubler

Manufacturer: NXP Semiconductors

General Description

Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.

CAUTION www.DataSheet4U.com This device is sensitive to ElectroStatic Discharge (ESD).

Therefore care should be taken during transport and handling.

Overview

CGD1042H 1 GHz, 23 dB gain high output power doubler Rev.

01 — 9 October 2007 Product data sheet 1.

Product profile 1.

Key Features

  • I I I I I I I High output power capability Excellent linearity Extremely low noise Excellent return loss properties Rugged construction Unconditionally stable Thermal optimized design 1.3.