CGD1042HI Datasheet 1 GHz 22 dB gain GaAs high output power doubler

Manufacturer: NXP Semiconductors

CGD1042HI 1 ghz 22 db gain gaas high output power doubler by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	CGD1042HI
Manufacturer	NXP Semiconductors
File Size	76.22 KB
Description	1 GHz 22 dB gain GaAs high output power doubler
Datasheet	CGD1042HI Datasheet

General Description

Hybrid ampliﬁer module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.

1.2

Overview

CGD1042HI Rev.

01 — 21 September 2009 www.DataSheet4U.com 1 GHz, 22 dB gain GaAs high output power doubler Product data sheet 1.

Product proﬁle 1.

Key Features

I I I I I I I I I Excellent linearity Superior levels of ESD protection Extremely low noise Excellent return loss properties Gain compensation over temperature Rugged construction Unconditionally stable Thermally optimized design Compliant to Directive 2002/95/EC, regarding Restriction of the use of certain Hazardous Substances (RoHS) I Integrated ring wave surge protection 1.3.

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