CGY1032 - 1 GHz - 32 dB gain GaAs push-pull amplifier

NXP Semiconductors

Datasheet Details

Part number	CGY1032
Manufacturer	NXP Semiconductors
File Size	119.94 KB
Description	1 GHz - 32 dB gain GaAs push-pull amplifier
Datasheet	CGY1032 Datasheet

General Description

Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Heterojunction Field Effect Transistor (HFET) GaAs dies.

1.2

Overview

CGY1032 1 GHz, 32 dB gain GaAs push-pull amplifier Rev.

1 — 10 February 2011 Product data sheet 1.

Product profile 1.

Key Features

Excellent linearity, stability and reliability Extremely low noise Excellent return loss properties Rugged construction Unconditionally stable Thermally optimized design Superior levels of ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS).
Integrated ring wave surge protection.
Power gain is specified for both 870 MHz and 1003 MHz bandwidth 1.3 A.

More Datasheets from NXP Semiconductors

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