IP4256CZ3-M Datasheet | NXP Semiconductors

description The IP4256CZ3-M is a single-channel low-pass filter while the IP4256CZ5-W and IP4256CZ6-F are dual-channel RC low-pass filters. All devices provide high-level Electro Static Discharge (ESD) protection. The devices are designed to protect a range of portable munication transmitter applications against unwanted RF signals. The devices incorporate diodes to provide protection to downstream ponents from ESD voltages up to ±25 k V contact discharge far exceeding IEC 61000-4-2, level 4. The devices are manufactured using monolithic silicon technology in lead-free plastic packages. 1.2 Features and benefits - Pb-free, Restriction of Hazardous Substances (Ro HS) pliant and free of halogen and antimony (Dark Green pliant) - 100 Ω series channel resistance and 30 p F channel capacitance at 0 V bias voltage (DC) - ESD protection up to ±25 k V contact discharge far exceeding IEC 61000-4-2, level 4 - Single and dual-channel integrated π-type RC filter network - IP4256CZ3-M: single-channel device in a 3-pin Quad Flat-pack No-leads (QFN) patible Micro Pak plastic package - IP4256CZ5-W: dual-channel device in a 5-pin plastic package with 0.5 mm pitch - IP4256CZ6-F: dual-channel device in a 6-pin QFN patible Micro Pak plastic package with 0.5 mm pitch 1.3 Applications - General-purpose Electro Magnetic Interference (EMI), Radio Frequency Interference (RFI) filtering and downstream ESD protection for: ‹ Cellular phone and Personal munication System (PCS) mobile handset ‹ Cordless telephone ‹ Wireless data (WAN/LAN) system Data Sheet.in NXP Semiconductors IP4256CZ3-M/CZ5-W/CZ6-F Single and dual-channel passive filter network with ESD protection 1.4 Quick reference data Table 1. Symbol VESD Quick reference data Parameter electrostatic discharge voltage Conditions all pins to ground contact discharge air discharge Rs(ch) Cch channel series resistance channel capacitance for the total channel; f = 100 k Hz Vbias(DC) = 0 V Vbias(DC) = 2.5 V [1] According to IEC 61000-4-2...