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NXP Semiconductors Electronic Components Datasheet

NXS7002AK Datasheet

MOSFET

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NXS7002AK
60 V, single N-channel Trench MOSFET
25 September 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
Very fast switching
Trench MOSFET technology
ESD protected up to 400 V
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tamb = 25 °C
- - 60 V
VGS gate-source voltage
-20 -
20 V
ID
drain current
VGS = 10 V; Tamb = 25 °C
[1] - - 190 mA
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 100 mA; Tj = 25 °C
resistance
- 35Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
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NXP Semiconductors Electronic Components Datasheet

NXS7002AK Datasheet

MOSFET

No Preview Available !

NXP Semiconductors
NXS7002AK
60 V, single N-channel Trench MOSFET
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 G gate
2 S source
3 D drain
Simplified outline
3
Graphic symbol
D
12
TO-236AB (SOT23)
G
S
017aaa255
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
NXS7002AK
TO-236AB
Description
plastic surface-mounted package; 3 leads
Version
SOT23
4. Marking
Table 4. Marking codes
Type number
NXS7002AK
Marking code
[1]
%JH
[1] % = placeholder for manufacturing site code
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tamb = 25 °C
VGS gate-source voltage
ID drain current
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
[1]
[1]
[2]
[1]
NXS7002AK
Product data sheet
All information provided in this document is subject to legal disclaimers.
25 September 2012
Min Max Unit
- 60 V
-20 20
V
- 190 mA
- 120 mA
- 800 mA
- 265 mW
- 325 mW
© NXP B.V. 2012. All rights reserved
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Part Number NXS7002AK
Description MOSFET
Maker NXP Semiconductors
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