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PBHV9115T - 1 A PNP high-voltage low VCEsat (BISS) transistor

Description

PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

NPN complement: PBHV8115T.

Features

  • I I I I I High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified 1.3.

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Datasheet Details

Part number PBHV9115T
Manufacturer NXP Semiconductors
File Size 148.79 KB
Description 1 A PNP high-voltage low VCEsat (BISS) transistor
Datasheet download datasheet PBHV9115T Datasheet
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www.DataSheet4U.com PBHV9115T 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor Rev. 02 — 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8115T. 1.2 Features I I I I I High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified 1.3 Applications I I I I I I LED driver for LED chain module LCD backlighting High Intensity Discharge (HID) front lighting Automotive motor management Hook switch for wired telecom Switch mode power supply 1.4 Quick reference data Table 1.
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