• Part: PBRN123E
  • Description: NPN 800 mA 40 V BISS RETs
  • Manufacturer: NXP Semiconductors
  • Size: 188.65 KB
Download PBRN123E Datasheet PDF
NXP Semiconductors
PBRN123E
description 800 m A NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Package NXP PBRN123EK PBRN123ES[1] PBRN123ET [1] Type number JEITA SC-59A SC-43A - JEDEC TO-236 TO-92 TO-236AB SOT346 SOT54 SOT23 Also available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features I 800 m A output current capability I High current gain h FE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduces ponent count I Reduces pick and place costs I ±10 % resistor ratio tolerance 1.3 Applications I Digital application in automotive and industrial segments I Medium current peripheral driver I Switching loads 1.4 Quick reference data Table 2. Symbol VCEO IO Quick reference data Parameter collector-emitter voltage output current PBRN123EK, PBRN123ET PBRN123ES Conditions open base [1] Min - Typ - Max 40 600 800 Unit V m A m A .. NXP...