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PBSS5520X - 20V 5A PNP low VCEsat (BISS) transistor

General Description

PNP low VCEsat (BISS) transistor in a SOT89 (SC-62) plastic package.

NPN complement: PBSS4520X.

MAX.

20 5 10 54 UNIT V A A mΩ collector-emitter voltage collector

Key Features

  • High hFE and low VCEsat at high current operation.
  • High collector current IC: 5 A.
  • High efficiency leading to less heat generation.

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Full PDF Text Transcription for PBSS5520X (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PBSS5520X. For precise diagrams, and layout, please refer to the original PDF.

DISCRETE SEMICONDUCTORS www.DataSheet4U.com DATA SHEET book, halfpage M3D109 PBSS5520X 20 V, 5 A PNP low VCEsat (BISS) transistor Product specification Supersedes data of ...

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low VCEsat (BISS) transistor Product specification Supersedes data of 2004 Jun 23 2004 Nov 08 Philips Semiconductors www.DataSheet4U.com Product specification 20 V, 5 A PNP low VCEsat (BISS) transistor FEATURES • High hFE and low VCEsat at high current operation • High collector current IC: 5 A • High efficiency leading to less heat generation. APPLICATIONS • Medium power peripheral drivers (e.g. fans and motors) • Strobe flash units for digital still cameras and mobile phones • Power switch for LAN and ADSL systems • Medium power DC-to-DC conversion • Battery chargers • Supply line switching. DESCRIPTION PNP low VCEsat (BI

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