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PESD1LIN Datasheet

LIN bus ESD protection diode

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PESD1LIN
LIN bus ESD protection diode
Rev. 02 — 12 November 2008
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
PESD1LIN in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic
package designed to protect one automotive Local Interconnect Network (LIN) bus line
from the damage caused by ElectroStatic Discharge (ESD) and other transients.
1.2 Features
I ESD protection of one automotive LIN bus line
I Asymmetrical diode configuration ensures an optimized ElectroMagnetic
Immunity (EMI) of a LIN Electronic Control Unit (ECU)
I Due to the integrated diode structure only one very small SOD323 package is needed
I Max. peak pulse power: PPP = 160 W at tp = 8/20 µs
I Low clamping voltage: VCL = 40 V at IPP = 1 A
I Ultra low leakage current: IRM < 1 nA
I ESD protection of up to 23 kV
I IEC 61000-4-2, level 4 (ESD)
I IEC 61000-4-5 (surge); IPP = 3 A at tp = 8/20 µs
1.3 Applications
I LIN bus protection
I Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
VRWM
reverse standoff voltage
PESD1LIN (15 V)
PESD1LIN (24 V)
Cd diode capacitance
Conditions
VR = 0 V;
f = 1 MHz
Min Typ Max Unit
- - 15 V
- - 24 V
- 13 17 pF


NXP Semiconductors Electronic Components Datasheet

PESD1LIN Datasheet

LIN bus ESD protection diode

No Preview Available !

NXP Semiconductors
PESD1LINwww.DataSheet4U.com
LIN bus ESD protection diode
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode 1 (15 V)
cathode 2 (24 V)
Simplified outline Graphic symbol
12
12
006aab041
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
PESD1LIN SC-76 plastic surface-mounted package; 2 leads
Version
SOD323
4. Marking
Table 4. Marking codes
Type number
PESD1LIN
Marking code
AM
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
PPP
IPP
Tj
Tamb
Tstg
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
Conditions
tp = 8/20 µs
tp = 8/20 µs
Min
[1] -
[1] -
-
65
65
Max
160
3
150
+150
+150
Unit
W
A
°C
°C
°C
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
PESD1LIN_2
Product data sheet
Rev. 02 — 12 November 2008
© NXP B.V. 2008. All rights reserved.
2 of 11


Part Number PESD1LIN
Description LIN bus ESD protection diode
Maker NXP Semiconductors
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PESD1LIN Datasheet PDF






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