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PESD5V0X1BCL Key Features

  • Bidirectional ESD protection of one line
  • ESD protection up to 8 kV
  • IEC 61000-4-2; level 4 (ESD)
  • Extremely low capacitance: Cd = 0.49 pF
  • AEC-Q101 qualified
  • Low clamping voltage: VCL = 18 V
  • Ultra low leakage current: IRM = 1 nA

Other PESD5V0X1BCL Datasheets

Manufacturer Part Number Description
NXP Logo NXP Semiconductors PESD5V0X1BCAL Extremely low capacitance bidirectional ESD protection diode
nexperia Logo Nexperia PESD5V0X1BCAL Extremely low capacitance bidirectional ESD protection diode
nexperia Logo Nexperia PESD5V0X1BCAL-Q Extremely low capacitance bidirectional ESD protection diode
NXP Logo NXP Semiconductors PESD5V0X1BCSF Ultra low capacitance bidirectional ESD protection diode
nexperia Logo Nexperia PESD5V0X1BCSF Ultra low capacitance bidirectional ESD protection diode

PESD5V0X1BCL Description

Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a leadless ultra small SOD882 (DFN1006-2) Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients. The bination of extremely low capacitance, high ESD maximum rating and ultra small package makes the device ideal for high-speed data line protection.