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PH16030L
N-channel TrenchMOS™ logic level FET
Rev. 01 — 24 February 2005
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology.
1.2 Features
s Logic level threshold s SO8 equivalent area footprint s Low thermal resistance s Low gate charge.
1.3 Applications
s DC-to-DC converters s Portable appliances.
1.4 Quick reference data
s VDS ≤ 30 V s RDSon ≤ 16.9 mΩ s ID ≤ 38 A s Qgd = 2.9 nC (typ).
2. Pinning information
Table 1: Pin 1, 2, 3 4 mb Pinning Description source gate mounting base; connected to drain
mb
D
Simplified outline
Symbol
G
mbb076
S
1 2 3 4
SOT669 (LFPAK)
Philips Semiconductors
w w w . D a t a S h e e t 4 U .
PH16030L Datasheet
