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PH97005 Datasheet

Low cost DECT Power Amplifier

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Philips Semiconductors B.V.
Low cost DECT Power Amplifier
PH97005
Preliminary Application Note
RNR-T4 5-97-M-0 931
Au th or
L.C. Colussi
November 21, 1997
Discrete Semiconductors Nijmegen
Gerstweg 2, 6534 AE Nijmegen
The Netherlands
Key wor ds
PA, DECT, DPO, BFG425W, BFG21W
Abs tr ac t
Application of new 5th generation discrete bipolar RF transistors facilitates design of a low cost
two-stage power amplifier for DECT systems, having a power gain of 26 dB and an overall
efficiency better than 40%. The amplifier operates from a single supply voltage, includes bias
circuitry for load power adjustment and on/off switching and is mounted on a bilayer pcb,
requiring 10 x 20 mm. A description is given of the circuit design and the board layout, including
measurement results.
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NXP Semiconductors Electronic Components Datasheet

PH97005 Datasheet

Low cost DECT Power Amplifier

No Preview Available !

Philips Semiconductors B.V.
PH97005
Low cost DECT Power Amplifier
INTRODU CTION
This note describes the application of two of the new 5th generation silicon bipolar RF transistors
in SOT343R plastic SMD package in a two-stage power amplifier (PA), designed for use in
DECT cordless telephone systems. These transistors, manufactured according to the new
double-poly process, are characterised by their high transition frequency (fT > 20 GHz) at low
supply voltages, resulting in a superior power gain at microwave frequencies, usually a field
dedicated to GaAs-devices. Two layers of polysilicon are used: one for contacting the base,
yielding a low base resistance and one to form the emitter, resulting in a steep emitter dope
profile and an effective emitter width of 0.5 ยตm. A buried N-layer (collector) is placed within a P-
substrate, which is connected to the emitter package lead, which enables the die to be placed
on the ground plane, reducing emitter inductance and thermal resistance. Figure 1 shows a
cross section of a double-poly buried layer transistor.
1 base
2 emitter
3 collector
4 emitter
Figure 1: Cross section and package of the double-poly buried layer RF transistors.
With only two double-poly transistors a complete amplifier line-up can be realised, offering
26 dBm of output power with more than 26 dB power gain. The amplifier requires a single
supply voltage of 3.6 V and typically has 44% efficiency. The biasing circuitry uses only one
NPN transistor pair, which also performs load power adjustment and on/off switching functions.
Thanks to the low component count and simple matching networks the entire amplifier
(including bias part) only measures 10 x 20 mm.
As compared to a previous demonstration board, PH96060 (Preliminary Application Note
RNR-T45-96-T-838) this one offers lower additional component count, but is less suitable for
PHS application.
The main features of the PA are:
- low component count
- small size
- high efficiency
- single supply operation
www.DataSheet4U.com
RNR-T45-97-M-0931


Part Number PH97005
Description Low cost DECT Power Amplifier
Maker NXP Semiconductors
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