900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




NXP Semiconductors Electronic Components Datasheet

PHB110NQ08T Datasheet

N-Channel MOSFET

No Preview Available !

PHB110NQ08T
N-channel TrenchMOS standard level FET
Rev. 02 — 12 October 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Suitable for standard level gate drive
sources
1.3 Applications
„ DC-to-DC convertors
„ General industrial applications
„ Motors, lamps and solenoids
„ Uninterruptible power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj 25 °C; Tj 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1 and 3
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 25 A;
VDS = 60 V; Tj = 25 °C;
see Figure 11
Static characteristics
RDSon
drain-source
VGS = 10 V; ID = 25 A;
on-state resistance Tj = 25 °C; see Figure 9 and 10
Min Typ Max Unit
- - 75 V
- - 75 A
- - 230 W
- 48.2 - nC
-
7.7 9
m


NXP Semiconductors Electronic Components Datasheet

PHB110NQ08T Datasheet

N-Channel MOSFET

No Preview Available !

NXP Semiconductors
PHB110NQ08T
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1G
gate
2D
drain
3S
source
mb D
mounting base; connected to
drain
[1] It is not possible to make a connection to pin 2.
Simplified outline
[1] mb
2
13
SOT404 (D2PAK)
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
Description
PHB110NQ08T D2PAK
plastic single-ended surface-mounted package (D2PAK); 3 leads (one
lead cropped)
Version
SOT404
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Conditions
Tj 25 °C; Tj 175 °C
Tj 25 °C; Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1 and 3
tp 10 µs; pulsed; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
IS source current Tmb = 25 °C
ISM peak source current tp 10 µs; pulsed; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 75 A; Vsup 75 V;
drain-source avalanche unclamped; tp = 0.15 ms; RGS = 50
energy
Min Max Unit
- 75 V
- 75 V
-20 20
V
- 75 A
- 75 A
- 440 A
- 230 W
-55 175 °C
-55 175 °C
- 75 A
- 440 A
- 560 mJ
PHB110NQ08T_2
Product data sheet
Rev. 02 — 12 October 2009
© NXP B.V. 2009. All rights reserved.
2 of 12


Part Number PHB110NQ08T
Description N-Channel MOSFET
Maker NXP Semiconductors
PDF Download

PHB110NQ08T Datasheet PDF






Similar Datasheet

1 PHB110NQ08LT N-channel TrenchMOS logic level FET
NXP Semiconductors
2 PHB110NQ08T N-Channel MOSFET
nexperia
3 PHB110NQ08T N-Channel MOSFET
NXP Semiconductors





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy