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PMEG2010EV Datasheet Low VF MEGA Schottky barrier diode

Manufacturer: NXP Semiconductors

General Description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection in a SOT666 ultra small SMD plastic package.

1 2 3 handbook, halfpage 6 PMEG2010EV PINNING PIN 1 2 3 4 5 6 cathode cathode anode anode cathode cathode DESCRIPTION 5 4 1, 2 5, 6 3, 4 MHC310 Marking code: F1.

Fig.1 Simplified outline (SOT666) and symbol.

Overview

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PMEG2010EV Low VF MEGA Schottky barrier diode Product specification Supersedes data of 2002 Jun 24 2003 Aug 20 www.DataSheet4U.

Key Features

  • Forward current: 1 A.
  • Reverse voltage: 20 V.
  • Very low forward voltage.
  • Ultra small SMD package.
  • Flat leads: excellent coplanarity and improved thermal behaviour.