PMEG4010EP Datasheet | NXP Semiconductors

description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package. .. 1.2 Features I I I I I I Average forward current: IF(AV) ≤ 1 A Reverse voltage: VR ≤ 40 V Low forward voltage High power capability due to clip-bond technology AEC-Q101 qualified Small and flat lead SMD plastic package 1.3 Applications I I I I I Low voltage rectification High efficiency DC-to-DC conversion Switch Mode Power Supply (SMPS) Reverse polarity protection Low power consumption applications 1.4 Quick reference data Table 1. Quick reference data Tj = 25 °C unless otherwise specified. Symbol IF(AV) Parameter average forward current Conditions square wave; δ = 0.5; f = 20 k Hz Tamb ≤ 120 °C Tsp ≤ 145 °C VR VF IR [1] [1] Min Typ Max Unit - 430 10 1 1 40 490 50 A A V m V µA reverse voltage forward voltage reverse current IF = 1 A VR = 40 V Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. NXP Semiconductors 1 A low VF MEGA Schottky barrier rectifier 2. Pinning information Table 2. Pin 1 2 Pinning Description cathode anode [1] Simplified outline Graphic symbol 1 2 sym001 [1] The marking bar indicates the cathode. 3. Ordering information .. Table 3. Ordering information Package Name Description plastic surface-mounted package; 2 leads Version SOD128 - Type number PMEG4010EP 4. Marking Table 4. Marking codes Marking code AC Type number PMEG4010EP 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VR IF(AV) Parameter reverse voltage average forward current Conditions Tj = 25 °C square wave; δ = 0.5; f = 20 k Hz Tamb ≤ 120 °C Tsp ≤ 145 °C IFSM Ptot non-repetitive peak forward current total power dissipation square wave; tp = 8 ms Tamb ≤ 25...