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PMEG6010ETR - Schottky barrier rectifier

General Description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package.

Key Features

  • Average forward current: IF(AV) ≤ 1 A.
  • Reverse voltage: VR ≤ 60 V.
  • Low forward voltage.
  • High power capability due to clip-bonding technology.
  • Small and flat lead SMD plastic package.
  • AEC-Q101 qualified.
  • High temperature Tj ≤ 175 °C 1.3.

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Datasheet Details

Part number PMEG6010ETR
Manufacturer NXP Semiconductors
File Size 262.12 KB
Description Schottky barrier rectifier
Datasheet download datasheet PMEG6010ETR Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMEG6010ETR 10 October 2012 High-temperature 60 V, 1 A Schottky barrier rectifier Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits • Average forward current: IF(AV) ≤ 1 A • Reverse voltage: VR ≤ 60 V • Low forward voltage • High power capability due to clip-bonding technology • Small and flat lead SMD plastic package • AEC-Q101 qualified • High temperature Tj ≤ 175 °C 1.3 Applications • Low voltage rectification • High efficiency DC-to-DC conversion • Switch mode power supply • Reverse polarity protection http://www.