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PML340SN Datasheet

N-channel TrenchMOS standard level FET

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PML340SN
N-channel TrenchMOS standard level FET
Rev. 01 — 24 August 2006
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a
surface-mounted plastic package using TrenchMOS technology.
1.2 Features
I Standard level threshold
I Very low thermal impedance
I Low profile and small footprint
I Low on-state resistance
1.3 Applications
I Primary side switching
I DC-to-DC converters
1.4 Quick reference data
I VDS 220 V
I RDSon 386 m
I ID 7.3 A
I QGD = 4.25 nC (typ)
2. Pinning information
Table 1.
Pin
1, 2, 3
4
5, 6, 7, 8
Pinning
Description
source (S)
gate (G)
drain (D)
Simplified outline
8765
1234
Transparent
top view
SOT873-1 (HVSON8)
Symbol
D
G
mbb076 S


NXP Semiconductors Electronic Components Datasheet

PML340SN Datasheet

N-channel TrenchMOS standard level FET

No Preview Available !

Philips Semiconductors
PML340SN
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2. Ordering information
Type number
Package
Name
PML340SN
HVSON8
4. Limiting values
Description
Version
plastic thermal enhanced very thin small outline package; no leads; SOT873-1
8 terminals; body 3.3 × 3.3 × 0.85 mm
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
ID drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
25 °C Tj 150 °C
Tmb = 25 °C; VGS = 10 V; see Figure 2 and 3
Tmb = 100 °C; VGS = 10 V; see Figure 2
Tmb = 25 °C; pulsed; tp 10 µs; see Figure 3
Tmb = 25 °C; see Figure 1
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
Tmb = 25 °C; pulsed; tp 10 µs
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 3.5 A;
tp = 0.05 ms; VDS 220 V; RGS = 50 ;
VGS = 10 V; starting at Tj = 25 °C
Min Max Unit
- 220 V
- ±20 V
- 7.3 A
- 4.4 A
- 14 A
- 50 W
55 +150 °C
55 +150 °C
- 7.6 A
- 14 A
- 22 mJ
PML340SN_1
Product data sheet
Rev. 01 — 24 August 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
2 of 12


Part Number PML340SN
Description N-channel TrenchMOS standard level FET
Maker NXP Semiconductors
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