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PMWD16UN - Dual N-channel uTrenchMOS ultra low level FET

Description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology.

Features

  • s Surface mounting package s Very low threshold voltage s Low profile s Fast switching 1.3.

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Datasheet Details

Part number PMWD16UN
Manufacturer NXP Semiconductors
File Size 120.42 KB
Description Dual N-channel uTrenchMOS ultra low level FET
Datasheet download datasheet PMWD16UN Datasheet
Additional preview pages of the PMWD16UN datasheet.

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Full PDF Text Transcription

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PMWD16UN Rev. 02 — 24 March 2005 www.DataSheet4U.com Dual N-channel µTrenchMOS™ ultra low level FET Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology. 1.2 Features s Surface mounting package s Very low threshold voltage s Low profile s Fast switching 1.3 Applications s Portable appliances s Battery management s PCMCIA cards s Load switching 1.4 Quick reference data s VDS ≤ 20 V s Ptot ≤ 3.1 W s ID ≤ 9.9 A s RDSon ≤ 19 mΩ 2.
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