PMWD18UN Description
Dual mon drain N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
- Part: PMWD18UN
- Manufacturer: NXP Semiconductors (official site)
- Size: 118.90 KB
PMWD18UN is Dual N-channel uTrenchMOS ultra low level FET manufactured by NXP Semiconductors .
Dual mon drain N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.