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PMWD20XN - Dual N-channel uTrenchMOS extremely low level FET

Description

Dual common drain N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology.

Features

  • s Surface-mounted package s Extremely low threshold voltage s Low profile s Fast switching 1.3.

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Datasheet Details

Part number PMWD20XN
Manufacturer NXP Semiconductors
File Size 120.14 KB
Description Dual N-channel uTrenchMOS extremely low level FET
Datasheet download datasheet PMWD20XN Datasheet
Additional preview pages of the PMWD20XN datasheet.

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Full PDF Text Transcription

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PMWD20XN Rev. 02 — 26 April 2005 www.DataSheet4U.com Dual N-channel µTrenchMOS™ extremely low level FET Product data sheet 1. Product profile 1.1 General description Dual common drain N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology. 1.2 Features s Surface-mounted package s Extremely low threshold voltage s Low profile s Fast switching 1.3 Applications s Portable appliances s Battery management 1.4 Quick reference data s VDS ≤ 20 V s Ptot ≤ 4.2 W s ID ≤ 10.4 A s RDSon ≤ 24 mΩ 2.
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