PMZ350XN fet equivalent, n-channel trenchmos standard level fet.
I Profile 55 % lower than SOT23 I Low on-state resistance I Leadless package I Footprint 90 % smaller than SOT23 I Low threshold voltage I fast switching
1.3 Applications.
I Driver circuits I DC-to-DC converters I Load switching in portable appliances
1.4 Quick reference data
I VDS ≤ 30 V I.
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
1.2 Features
I Profile 55 % lower than SOT23 I Low on-state resistance I Leadless package I Footprint 90 % smaller than SOT23 I Low threshold vo.
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