PMZB370UNE

The PMZB370UNE is MOSFET designed by NXP Semiconductors.

Product Overview

NXP Semiconductors

Datasheet Details

Part number	PMZB370UNE
Manufacturer	NXP Semiconductors
File Size	331.98 KB
Description	MOSFET
Datasheet	PMZB370UNE-NXPSemiconductors.pdf
Additional preview pages of the PMZB370UNE datasheet.

Product details

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Very fast switching.
Trench MOSFET technology.
Low threshold voltage.
Ultra thin package profile with 0.37 mm height.
ESD protection up to 2 kV 1.3.

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Other Datasheets by NXP Semiconductors

PMZB300XN - single N-channel Trench MOSFET
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PMZB380XN - MOSFET
PMZB290UN - single N-channel Trench MOSFET
PMZB290UNE - single N-channel Trench MOSFET
PMZB420UN - MOSFET

Published: Aug 18, 2014 |