PMZB370UNE Datasheet, NXP Semiconductors

* Very fast switching
* Trench MOSFET technology
* Low threshold voltage
* Ultra thin package profile with 0.37 mm height
* ESD protection up to 2 kV .

* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits 1.4 Quick reference .

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. SO T8 1.2 Features and benefits
* Very fast switching
* Tr.