PSMN018-80YS Datasheet | NXP Semiconductors

description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - Advanced Trench MOS provides low RDSon and low gate charge - High efficiency gains in switching power converters - Improved mechanical and thermal characteristics - LFPAK provides maximum power density in a Power SO8 package 1.3 Applications - DC-to-DC converters - Lithium-ion battery protection - Load switching - Motor control - Server power supplies 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 5 A; Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 5 A; Tj = 25 °C; see Figure 12; see Figure 13 Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 Typ 15 Max Unit 80 45 89 175 28 18 V A W °C mΩ mΩ Static characteristics NXP Semiconductors N-channel LFPAK 80 V 18 mΩ standard level MOSFET Quick reference data …continued Parameter gate-drain charge total gate charge Conditions VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14; see Figure 15 Min Typ 6 26 Max Unit n C n C Table 1. Symbol QGD QG(tot) Dynamic characteristics Avalanche ruggedness EDS(AL)S non-repetitive VGS = 10 V; Tj(init) = 25 °C; drain-source avalanche ID = 45 A; Vsup ≤ 80 V; energy RGS = 50 Ω; unclamped 64 m J 2. Pinning information Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source gate mounting base; connected to drain mbb076 Simplified outline mb Graphic symbol 1 2 3 4 SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Package Name PSMN018-80YS LFPAK Description Version plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 Type number All...