PSMN034-100PS Datasheet | NXP Semiconductors

N-channel 100 V 34.5 mΩ standard level MOSFET in TO220. Rev. 02 - 1 March 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - High efficiency due to low switching and conduction losses - Suitable for standard level gate drive 1.3 Applications - DC-to-DC converters - Load switching - Motor control - Server power supplies 1.4 Quick reference data Table 1. VDS ID Ptot Tj Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 VGS = 10 V; Tj(init) = 25 °C; ID = 32 A; Vsup ≤ 100 V; unclamped; RGS = 50 Ω VGS = 10 V; ID = 15 A; VDS = 50 V; see Figure 12 and 13 VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 11 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 16 Typ Max 100 32 86 175 42 Unit V A W °C m J drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation junction temperature Symbol Parameter Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge 6.9 23.8 n C n C Static characteristics RDSon drain-source on-state resistance 29.3 62 34.5 mΩ mΩ NXP Semiconductors N-channel 100 V 34.5 mΩ standard level MOSFET in TO220. 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol G D S D Description gate drain source mounting base; connected to drain mb Simplified outline Graphic symbol G mbb076 1 2 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Package Name PSMN034-100PS TO-220AB Description Version plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78 TO-220AB Type number PSMN034-100PS_2...