PSMN069-100YS Key Features
- Advanced TrenchMOS provides low RDSon and low gate charge
- High efficiency gains in switching power converters
- Improved mechanical and thermal characteristics
- LFPAK provides maximum power density in a Power SO8 package
- Part: PSMN069-100YS
- Manufacturer: NXP Semiconductors
- Size: 294.69 KB
Other PSMN069-100YS Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Nexperia |
PSMN069-100YS | N-channel MOSFET |