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PSMN102-200Y - N-channel TrenchMOS SiliconMAX standard level FET

Description

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Features

  • Higher operating power due to low thermal resistance.
  • Suitable for high frequency.

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Datasheet Details

Part number PSMN102-200Y
Manufacturer NXP Semiconductors
File Size 332.92 KB
Description N-channel TrenchMOS SiliconMAX standard level FET
Datasheet download datasheet PSMN102-200Y Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LF PA K PSMN102-200Y N-channel TrenchMOS SiliconMAX standard level FET Rev. 03 — 16 March 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits  Higher operating power due to low thermal resistance  Suitable for high frequency applications due to fast switching characteristics 1.3 Applications  Class D amplifier  DC-to-DC converters  Motion control  Switched-mode power supplies 1.4 Quick reference data Table 1.
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