PSMN2R9-30MLC Key Features
- Low parasitic inductance and resistance
- Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
- Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads
- Part: PSMN2R9-30MLC
- Description: MOSFET
- Manufacturer: NXP Semiconductors
- Size: 225.61 KB
Other PSMN2R9-30MLC Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Nexperia |
PSMN2R9-30MLC | N-channel MOSFET |