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PSMN3R0-60ES - MOSFET

General Description

Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C.

This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

2.

Key Features

  • High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PSMN3R0-60ES 3 June 2014 I2P AK N-channel 60 V 3.0 mΩ standard level MOSFET in I2PAK. Product data sheet 1. General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • • High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources 3. Applications • • • • DC-to-DC converters Load switching Motor control Server power supplies 4. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; Fig. 2 Tmb = 25 °C; Fig.