* High reliability Power SO8 package, qualified to 175°C
* Low parasitic inductance and resistance
* Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
* Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads 1.3 Applic
PSMN3R2-30YLC Datasheet (254.06 KB)
PSMN3R2-30YLC
NXP ↗ Semiconductors
254.06 KB
Mosfet.
LF PA K PSMN3R2-30YLC N-channel 30 V 3.5mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 01 2 May 2011 Product data sheet 1..
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