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PSMN3R8-100BS Datasheet

MOSFET

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PSMN3R8-100BS
N-channel 100 V 3.9 mstandard level MOSFET in D2PAK
Rev. 2 — 29 February 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 10 V; ID = 25 A; Tj = 100 °C;
see Figure 12; see Figure 13
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 12; see Figure 13
VGS = 10 V; ID = 75 A; VDS = 50 V;
see Figure 14; see Figure 15
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup 100 V; RGS = 50 ; Unclamped
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 100 V
[1] - - 120 A
- - 306 W
-55 -
175 °C
- 5.9 6.9 m
- 3.28 3.9 m
- 49 - nC
- 170 - nC
- - 537 mJ


NXP Semiconductors Electronic Components Datasheet

PSMN3R8-100BS Datasheet

MOSFET

No Preview Available !

NXP Semiconductors
PSMN3R8-100BS
N-channel 100 V 3.9 mstandard level MOSFET in D2PAK
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain[1]
S source
D mounting base;
connected to drain
[1] It is not possible to make connection to pin 2.
3. Ordering information
Simplified outline
mb
2
13
SOT404 (D2PAK)
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN3R8-100BS
D2PAK
4. Limiting values
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
Conditions
Tj 25 °C; Tj 175 °C
Tj 25 °C; Tj 175 °C; RGS = 20 k
VGS = 10 V; Tj = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
pulsed; tp 10 µs; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup 100 V; RGS = 50 ; Unclamped
[1] Continuous current is limited by package.
Min
-
-
-20
[1] -
[1] -
-
-
-55
-55
-
Max Unit
100 V
100 V
20 V
120 A
120 A
680 A
306 W
175 °C
175 °C
260 °C
[1] -
120 A
- 680 A
- 537 mJ
PSMN3R8-100BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 February 2012
© NXP B.V. 2012. All rights reserved.
2 of 14


Part Number PSMN3R8-100BS
Description MOSFET
Maker NXP Semiconductors
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