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PSMN4R2-60PL - MOSFET

General Description

Logic level N-channel MOSFET in SOT78 using TrenchMOS technology.

Product design and manufacture has been optimized for use in battery operated power tools.

2.

Key Features

  • High efficiency due to low switching & conduction losses Robust construction for demanding.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PSMN4R2-60PL 5 February 2013 TO -2 20A B N-channel 60 V, 3.9 mΩ logic level MOSFET in SOT78 Product data sheet 1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits • • • High efficiency due to low switching & conduction losses Robust construction for demanding applications Logic level gate 3. Applications • • • • Battery-powered tools Load switching Motor control Uninterruptible power supplies 4. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig.