PSMN4R3-80PS Datasheet | NXP Semiconductors

description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - High efficiency due to low switching and conduction losses - Suitable for standard level gate drive 1.3 Applications - DC-to-DC converters - Load switch - Motor control - Server power supplies 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13 VGS = 10 V; ID = 25 A; Tj = 100 °C; see Figure 12 [2] Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min -55 Typ - Max Unit 80 120 306 175 V A W °C Static characteristics RDSon 3.7 6.1 4.3 7.1 mΩ mΩ [2] NXP Semiconductors N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220 Quick reference data …continued Parameter gate-drain charge total gate charge Conditions VGS = 10 V; ID = 75 A; VDS = 40 V; see Figure 14; see Figure 15 VGS = 10 V; Tj(init) = 25 °C; ID = 120 A; Vsup ≤ 80 V; RGS = 50 Ω; unclamped Min Typ Max Unit n C n C Table 1. Symbol QGD QG(tot) Dynamic characteristics 28.4 111 - Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy 676 m J [1] [2] Continuous current is limited by package Measured 3 mm from package. 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source drain mbb076 Simplified outline mb Graphic symbol 1 2 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Package Name PSMN4R3-80PS TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 Type number All information provided in this document is subject to legal disclaimers. ©...