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PSMN4R6-100XS Datasheet

MOSFET

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PSMN4R6-100XS
N-channel 100V 4.6 mstandard level MOSFET in TO220F
(SOT186A)
Rev. 1 — 3 July 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C.
This product is designed and qualified for use in a wide range of industrial,
communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Isolated package
Suitable for standard level gate drive
1.3 Applications
AC-to-DC power supply equipment
Motor control
Server power supplies
Synchronous rectification
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 12; see Figure 13
VGS = 10 V; ID = 15 A; VDS = 50 V;
see Figure 14; see Figure 15
VGS = 10 V; Tj(init) = 25 °C;
ID = 70.4 A; Vsup 100 V;
unclamped; RGS = 50 ;
see Figure 3
Min Typ Max Unit
- - 100 V
- - 70.4 A
- - 63.8 W
- 3.95 4.6 m
- 40 - nC
- 153 - nC
- - 673 mJ


NXP Semiconductors Electronic Components Datasheet

PSMN4R6-100XS Datasheet

MOSFET

No Preview Available !

NXP Semiconductors
PSMN4R6-100XS
N-channel 100V 4.6 mstandard level MOSFET in TO220F (SOT186A)
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain
S source
mounting base; isolated
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT186A
Table 3. Ordering information
Type number
Package
Name
PSMN4R6-100XS
-
Description
plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
PSMN4R6-100XS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 3 July 2012
© NXP B.V. 2012. All rights reserved.
2 of 15


Part Number PSMN4R6-100XS
Description MOSFET
Maker NXP Semiconductors
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