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PSMN5R6-100XS Datasheet

MOSFET

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PSMN5R6-100XS
N-channel 100V 5.6 mstandard level MOSFET in TO220F
(SOT186A)
Rev. 3 — 6 March 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C.
This product is designed and qualified for use in a wide range of industrial,
communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Isolated package
Suitable for standard level gate drive
1.3 Applications
AC-to-DC power supply equipment
Motor control
Server power supplies
Synchronous rectification
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 12; see Figure 13
VGS = 10 V; ID = 15 A; VDS = 50 V; see
Figure 14; see Figure 15
VGS = 10 V; Tj(init) = 25 °C; ID = 61.8 A;
Vsup 100 V; unclamped; RGS = 50 ;
see Figure 3
Min Typ Max Unit
- - 100 V
- - 61.8 A
- - 60 W
- 4.3 5.6 m
- 41.2 - nC
- 145 - nC
- - 550 mJ


NXP Semiconductors Electronic Components Datasheet

PSMN5R6-100XS Datasheet

MOSFET

No Preview Available !

NXP Semiconductors
PSMN5R6-100XS
N-channel 100V 5.6 mstandard level MOSFET in TO220F (SOT186A)
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain
S source
mounting base; isolated
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT186A (TO-220F)
Table 3. Ordering information
Type number
Package
Name
PSMN5R6-100XS
TO-220F
4. Limiting values
Description
plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
Tj 25 °C; Tj 175 °C
VDGR
drain-gate voltage
Tj 25 °C; Tj 175 °C; RGS = 20 k
VGS gate-source voltage
ID drain current
VGS = 10 V; Tmb = 25 °C; see Figure 1
VGS = 10 V; Tmb = 100 °C; see Figure 1
IDM peak drain current
pulsed; tp 10 µs; Tmb = 25 °C; see Figure 4
Ptot
total power dissipation
Tmb = 25 °C; see Figure 2
Tstg storage temperature
Tj junction temperature
Tsld(M) peak soldering temperature
Source-drain diode
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
VGS = 10 V; Tj(init) = 25 °C; ID = 61.8 A; Vsup 100 V;
unclamped; RGS = 50 ; see Figure 3
PSMN5R6-100XS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 6 March 2012
Min Max Unit
- 100 V
- 100 V
-20 20 V
- 61.8 A
- 43.7 A
- 247 A
- 60 W
-55 175 °C
-55 175 °C
- 260 °C
- 50 A
- 247 A
- 550 mJ
© NXP B.V. 2012. All rights reserved.
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Part Number PSMN5R6-100XS
Description MOSFET
Maker NXP Semiconductors
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