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PSMN6R3-120PS Datasheet

MOSFET

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PSMN6R3-120PS
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
7 June 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in TO-220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic power supply equipment.
2. Features and benefits
High efficiency due to low switching and conduction losses
Improved dynamic avalanche performance
Suitable for standard level gate drive
TO-220 package can be mounted to heatsink
3. Applications
AC-to-DC power supply
Synchronous rectification
Motor control
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 12
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 25 A; VDS = 60 V;
Fig. 14; Fig. 15
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
source avalanche
energy
VGS = 10 V; Tj(init) = 25 °C; ID = 70 A;
Vsup ≤ 120 V; unclamped; RGS = 50 Ω;
Fig. 3
Min Typ Max Unit
- - 120 V
- - 70 A
- - 405 W
4 5.7 6.7 mΩ
- 61.9 - nC
- 207.1 - nC
- - 532 mJ
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NXP Semiconductors Electronic Components Datasheet

PSMN6R3-120PS Datasheet

MOSFET

No Preview Available !

NXP Semiconductors
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 G gate
2 D drain
3 S source
mb D
drain
PSMN6R3-120PS
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
123
TO-220AB (SOT78)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN6R3-120PS
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
VGS gate-source voltage
ID drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
VGS = 10 V; Tmb = 100 °C; Fig. 1
IDM peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
IS source current
Tmb = 25 °C
PSMN6R3-120PS
All information provided in this document is subject to legal disclaimers.
Product data sheet
7 June 2013
Min Max Unit
- 120 V
- 120 V
-20 20
V
- 70 A
- 70 A
- 280 A
- 405 W
-55 175 °C
-55 175 °C
- 260 °C
- 70 A
© NXP B.V. 2013. All rights reserved
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Part Number PSMN6R3-120PS
Description MOSFET
Maker NXP Semiconductors
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