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PSMN7R0-100BS Datasheet

MOSFET

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PSMN7R0-100BS
N-channel 100V 6.8 mstandard level MOSFET in D2PAK.
Rev. 2 — 2 March 2012
Objective data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; see Figure 2
Min Typ Max Unit
- - 100 V
[1] - - 100 A
- - 269 W
-55 -
175 °C
RDSon
drain-source on-state
resistance
Dynamic characteristics
VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 12
VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13
-
-
- 12 m
5.4 6.8 m
QGD
gate-drain charge
VGS = 10 V; ID = 25 A; VDS = 50 V;
see Figure 15; see Figure 14
- 36 - nC
QG(tot)
total gate charge
VGS = 10 V; ID = 25 A; VDS = 50 V;
see Figure 14; see Figure 15
- 125 - nC
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup = 100 V; unclamped; RGS = 50
- - 315 mJ
[1] Continuous current is limited by package.


NXP Semiconductors Electronic Components Datasheet

PSMN7R0-100BS Datasheet

MOSFET

No Preview Available !

NXP Semiconductors
PSMN7R0-100BS
N-channel 100V 6.8 mstandard level MOSFET in D2PAK.
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain[1]
S source
D mounting base; connected to drain
[1] It is not possible to make connection to pin 2.
Simplified outline
mb
2
13
SOT404 (D2PAK)
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name Description
PSMN7R0-100BS D2PAK
plastic single-ended surface-mounted package (D2PAK); 3 leads (one
lead cropped)
4. Limiting values
Version
SOT404
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
Conditions
Tj 25 °C; Tj 175 °C
Tj 175 °C; Tj 25 °C; RGS = 20 k
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
pulsed; tp 10 µs; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
avalanche energy
Vsup = 100 V; unclamped; RGS = 50
[1] Continuous current is limited by package.
Min
-
-
-20
-
[1] -
-
-
-55
-55
-
Max Unit
100 V
100 V
20 V
85 A
100 A
475 A
269 W
175 °C
175 °C
260 °C
[1] -
100 A
- 475 A
- 315 mJ
PSMN7R0-100BS
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 2 March 2012
© NXP B.V. 2012. All rights reserved.
2 of 14


Part Number PSMN7R0-100BS
Description MOSFET
Maker NXP Semiconductors
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