900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




NXP Semiconductors Electronic Components Datasheet

PSMN7R0-100XS Datasheet

MOSFET

No Preview Available !

PSMN7R0-100XS
N-channel 100V 6.8 mstandard level MOSFET in TO220F
(SOT186A)
Rev. 3 — 6 March 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C.
This product is designed and qualified for use in a wide range of industrial,
communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Isolated package
Suitable for standard level gate drive
1.3 Applications
AC-to-DC power supply equipment
Motor control
Server power supplies
Synchronous rectification
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 12; see Figure 13
VGS = 10 V; ID = 15 A; VDS = 50 V;
see Figure 14; see Figure 15
VGS = 10 V; Tj(init) = 25 °C; ID = 55 A;
Vsup 100 V; unclamped; RGS = 50 ;
see Figure 3
Min Typ Max Unit
- - 100 V
- - 55 A
- - 57.7 W
- 5.4 6.8 m
- 34 - nC
- 121 - nC
- - 420 mJ


NXP Semiconductors Electronic Components Datasheet

PSMN7R0-100XS Datasheet

MOSFET

No Preview Available !

NXP Semiconductors
PSMN7R0-100XS
N-channel 100V 6.8 mstandard level MOSFET in TO220F (SOT186A)
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain
S source
mounting base; isolated
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT186A (TO-220F)
Table 3. Ordering information
Type number
Package
Name
PSMN7R0-100XS
TO-220F
4. Limiting values
Description
plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
Conditions
Tj 25 °C; Tj 175 °C
Tj 25 °C; Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 25 °C; see Figure 1
VGS = 10 V; Tmb = 100 °C; see Figure 1
pulsed; tp 10 µs; Tmb = 25 °C; see Figure 4
Tmb = 25 °C; see Figure 2
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
VGS = 10 V; Tj(init) = 25 °C; ID = 55 A; Vsup 100 V;
unclamped; RGS = 50 ; see Figure 3
PSMN7R0-100XS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 6 March 2012
Min Max Unit
- 100 V
- 100 V
-20 20 V
- 55 A
- 38.9 A
- 220 A
- 57.7 W
-55 175 °C
-55 175 °C
- 260 °C
- 48 A
- 220 A
- 420 mJ
© NXP B.V. 2012. All rights reserved.
2 of 15


Part Number PSMN7R0-100XS
Description MOSFET
Maker NXP Semiconductors
PDF Download

PSMN7R0-100XS Datasheet PDF





Similar Datasheet

1 PSMN7R0-100XS MOSFET
NXP Semiconductors





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy